A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spec...

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Detalles Bibliográficos
Autores principales: Dai, Mingzhi, Khan, Karim, Zhang, Shengnan, Jiang, Kemin, Zhang, Xingye, Wang, Weiliang, Liang, Lingyan, Cao, Hongtao, Wang, Pengjun, Wang, Peng, Miao, Lijing, Qin, Haiming, Jiang, Jun, Xue, Lixin, Chu, Junhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4906344/
https://www.ncbi.nlm.nih.gov/pubmed/27297030
http://dx.doi.org/10.1038/srep24096

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4906344/
https://www.ncbi.nlm.nih.gov/pubmed/27297030
http://dx.doi.org/10.1038/srep24096

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