Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the d...

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Detalles Bibliográficos
Autores principales: Veal, Boyd W., Kim, Seong Keun, Zapol, Peter, Iddir, Hakim, Baldo, Peter M., Eastman, Jeffrey A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4906403/
https://www.ncbi.nlm.nih.gov/pubmed/27283250
http://dx.doi.org/10.1038/ncomms11892

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4906403/
https://www.ncbi.nlm.nih.gov/pubmed/27283250
http://dx.doi.org/10.1038/ncomms11892

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