Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexa...

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Detalles Bibliográficos
Autores principales: Liao, Gaohua, Luo, Ning, Chen, Ke-Qiu, Xu, H. Q.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4910168/
https://www.ncbi.nlm.nih.gov/pubmed/27307081
http://dx.doi.org/10.1038/srep28240

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4910168/
https://www.ncbi.nlm.nih.gov/pubmed/27307081
http://dx.doi.org/10.1038/srep28240

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