Material insights of HfO(2)-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO(2)-...

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Detalles Bibliográficos
Autores principales: Niu, Gang, Kim, Hee-Dong, Roelofs, Robin, Perez, Eduardo, Schubert, Markus Andreas, Zaumseil, Peter, Costina, Ioan, Wenger, Christian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4911574/
https://www.ncbi.nlm.nih.gov/pubmed/27312225
http://dx.doi.org/10.1038/srep28155

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4911574/
https://www.ncbi.nlm.nih.gov/pubmed/27312225
http://dx.doi.org/10.1038/srep28155

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