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Geometrically pinned magnetic domain wall for multi-bit per cell storage memory
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls (DWs) by an external magnetic field or a spin-polarized current. Controlling the position of DW is essential for defining the state/information in a magnetic memory. During the process of nanowire fabricatio...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4917858/ https://www.ncbi.nlm.nih.gov/pubmed/27334038 http://dx.doi.org/10.1038/srep28590 |