Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy

Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k·p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exch...

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Detalles Bibliográficos
Autores principales: Linares-García, Gabriel, Meza-Montes, Lilia, Stinaff, Eric, Alsolamy, S. M., Ware, M. E., Mazur, Y. I., Wang, Z. M., Lee, Jihoon, Salamo, G. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4920786/
https://www.ncbi.nlm.nih.gov/pubmed/27342603
http://dx.doi.org/10.1186/s11671-016-1518-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4920786/
https://www.ncbi.nlm.nih.gov/pubmed/27342603
http://dx.doi.org/10.1186/s11671-016-1518-2

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