Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy

Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k·p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exch...

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Detalles Bibliográficos
Autores principales: Linares-García, Gabriel, Meza-Montes, Lilia, Stinaff, Eric, Alsolamy, S. M., Ware, M. E., Mazur, Y. I., Wang, Z. M., Lee, Jihoon, Salamo, G. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4920786/
https://www.ncbi.nlm.nih.gov/pubmed/27342603
http://dx.doi.org/10.1186/s11671-016-1518-2
Descripción
Sumario:Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k·p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exchange interactions are studied and we found the system is in the strong confinement regime. Microphotoluminescence spectra and lifetimes were calculated and compared with measurements performed on a set of quantum rings in a single sample. Some features of spectra are in good agreement. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1186/s11671-016-1518-2) contains supplementary material, which is available to authorized users.

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