Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

Detalles Bibliográficos
Autores principales: Song, Seung Min, Bong, Jae Hoon, Hwang, Wan Sik, Cho, Byung Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Corrigenda
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4921914/
https://www.ncbi.nlm.nih.gov/pubmed/27346693
http://dx.doi.org/10.1038/srep28412

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4921914/
https://www.ncbi.nlm.nih.gov/pubmed/27346693
http://dx.doi.org/10.1038/srep28412

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