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Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4921914/ https://www.ncbi.nlm.nih.gov/pubmed/27346693 http://dx.doi.org/10.1038/srep28412 |
| _version_ | 1782439561048096768 |
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| author | Song, Seung Min Bong, Jae Hoon Hwang, Wan Sik Cho, Byung Jin |
| author_facet | Song, Seung Min Bong, Jae Hoon Hwang, Wan Sik Cho, Byung Jin |
| author_sort | Song, Seung Min |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-4921914 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2016 |
| publisher | Nature Publishing Group |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-49219142016-06-28 Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors Song, Seung Min Bong, Jae Hoon Hwang, Wan Sik Cho, Byung Jin Sci Rep Corrigenda Nature Publishing Group 2016-06-27 /pmc/articles/PMC4921914/ /pubmed/27346693 http://dx.doi.org/10.1038/srep28412 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| spellingShingle | Corrigenda Song, Seung Min Bong, Jae Hoon Hwang, Wan Sik Cho, Byung Jin Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors |
| title | Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors |
| title_full | Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors |
| title_fullStr | Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors |
| title_full_unstemmed | Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors |
| title_short | Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors |
| title_sort | corrigendum: improved drain current saturation and voltage gain in graphene–on–silicon field effect transistors |
| topic | Corrigenda |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4921914/ https://www.ncbi.nlm.nih.gov/pubmed/27346693 http://dx.doi.org/10.1038/srep28412 |
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