Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning tra...

Descripción completa

Detalles Bibliográficos
Autores principales: Carvalho, Daniel, Müller-Caspary, Knut, Schowalter, Marco, Grieb, Tim, Mehrtens, Thorsten, Rosenauer, Andreas, Ben, Teresa, García, Rafael, Redondo-Cubero, Andrés, Lorenz, Katharina, Daudin, Bruno, Morales, Francisco M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4923855/
https://www.ncbi.nlm.nih.gov/pubmed/27350322
http://dx.doi.org/10.1038/srep28459

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4923855/
https://www.ncbi.nlm.nih.gov/pubmed/27350322
http://dx.doi.org/10.1038/srep28459

Ejemplares similares