Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning tra...

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Detalles Bibliográficos
Autores principales: Carvalho, Daniel, Müller-Caspary, Knut, Schowalter, Marco, Grieb, Tim, Mehrtens, Thorsten, Rosenauer, Andreas, Ben, Teresa, García, Rafael, Redondo-Cubero, Andrés, Lorenz, Katharina, Daudin, Bruno, Morales, Francisco M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4923855/
https://www.ncbi.nlm.nih.gov/pubmed/27350322
http://dx.doi.org/10.1038/srep28459
Descripción
Sumario:The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.

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