An Automated Reverse-Bias Second-Breakdown Transistor Tester

An automated instrument is described for generating curves for the reverse-bias, safe-operating area of transistors nondestructively. A new technique for detecting second breakdown that makes automation possible is highlighted. Methods to reduce stress to the device under test are discussed, as are...

Descripción completa

Detalles Bibliográficos
Autor principal: Berning, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1991
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4924891/
https://www.ncbi.nlm.nih.gov/pubmed/28184116
http://dx.doi.org/10.6028/jres.096.016
Descripción
Sumario:An automated instrument is described for generating curves for the reverse-bias, safe-operating area of transistors nondestructively. A new technique for detecting second breakdown that makes automation possible is highlighted. Methods to reduce stress to the device under test are discussed, as are several other innovations that enhance automation. Measurements using the tester are described, and limitations on nondestructive testability are discussed.

Ejemplares similares