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An Automated Reverse-Bias Second-Breakdown Transistor Tester
An automated instrument is described for generating curves for the reverse-bias, safe-operating area of transistors nondestructively. A new technique for detecting second breakdown that makes automation possible is highlighted. Methods to reduce stress to the device under test are discussed, as are...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
1991
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4924891/ https://www.ncbi.nlm.nih.gov/pubmed/28184116 http://dx.doi.org/10.6028/jres.096.016 |
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author | Berning, David |
author_facet | Berning, David |
author_sort | Berning, David |
collection | PubMed |
description | An automated instrument is described for generating curves for the reverse-bias, safe-operating area of transistors nondestructively. A new technique for detecting second breakdown that makes automation possible is highlighted. Methods to reduce stress to the device under test are discussed, as are several other innovations that enhance automation. Measurements using the tester are described, and limitations on nondestructive testability are discussed. |
format | Online Article Text |
id | pubmed-4924891 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 1991 |
publisher | [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology |
record_format | MEDLINE/PubMed |
spelling | pubmed-49248912017-02-09 An Automated Reverse-Bias Second-Breakdown Transistor Tester Berning, David J Res Natl Inst Stand Technol Article An automated instrument is described for generating curves for the reverse-bias, safe-operating area of transistors nondestructively. A new technique for detecting second breakdown that makes automation possible is highlighted. Methods to reduce stress to the device under test are discussed, as are several other innovations that enhance automation. Measurements using the tester are described, and limitations on nondestructive testability are discussed. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1991 /pmc/articles/PMC4924891/ /pubmed/28184116 http://dx.doi.org/10.6028/jres.096.016 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright. |
spellingShingle | Article Berning, David An Automated Reverse-Bias Second-Breakdown Transistor Tester |
title | An Automated Reverse-Bias Second-Breakdown Transistor Tester |
title_full | An Automated Reverse-Bias Second-Breakdown Transistor Tester |
title_fullStr | An Automated Reverse-Bias Second-Breakdown Transistor Tester |
title_full_unstemmed | An Automated Reverse-Bias Second-Breakdown Transistor Tester |
title_short | An Automated Reverse-Bias Second-Breakdown Transistor Tester |
title_sort | automated reverse-bias second-breakdown transistor tester |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4924891/ https://www.ncbi.nlm.nih.gov/pubmed/28184116 http://dx.doi.org/10.6028/jres.096.016 |
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