Optical gain in GaAsBi/GaAs quantum well diode lasers

Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination and inter-valence band absorption loss mechanis...

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Detalles Bibliográficos
Autores principales: Marko, Igor P., Broderick, Christopher A., Jin, Shirong, Ludewig, Peter, Stolz, Wolfgang, Volz, Kerstin, Rorison, Judy M., O’Reilly, Eoin P., Sweeney, Stephen J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929443/
https://www.ncbi.nlm.nih.gov/pubmed/27363930
http://dx.doi.org/10.1038/srep28863

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929443/
https://www.ncbi.nlm.nih.gov/pubmed/27363930
http://dx.doi.org/10.1038/srep28863

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