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Nanoscale electrical properties of epitaxial Cu(3)Ge film

Cu(3)Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu(3)Ge have attracted great attention in the past decades. Despite the remarka...

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Detalles Bibliográficos
Autores principales: Wu, Fan, Cai, Wei, Gao, Jia, Loo, Yueh-Lin, Yao, Nan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929471/
https://www.ncbi.nlm.nih.gov/pubmed/27363582
http://dx.doi.org/10.1038/srep28818