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Nanoscale electrical properties of epitaxial Cu(3)Ge film
Cu(3)Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu(3)Ge have attracted great attention in the past decades. Despite the remarka...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929471/ https://www.ncbi.nlm.nih.gov/pubmed/27363582 http://dx.doi.org/10.1038/srep28818 |