InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive...

Descripción completa

Detalles Bibliográficos
Autores principales: Shiu, Guo-Yi, Chen, Kuei-Ting, Fan, Feng-Hsu, Huang, Kun-Pin, Hsu, Wei-Ju, Dai, Jing-Jie, Lai, Chun-Feng, Lin, Chia-Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929681/
https://www.ncbi.nlm.nih.gov/pubmed/27363290
http://dx.doi.org/10.1038/srep29138

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929681/
https://www.ncbi.nlm.nih.gov/pubmed/27363290
http://dx.doi.org/10.1038/srep29138

Ejemplares similares