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InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive...
Autores principales: | Shiu, Guo-Yi, Chen, Kuei-Ting, Fan, Feng-Hsu, Huang, Kun-Pin, Hsu, Wei-Ju, Dai, Jing-Jie, Lai, Chun-Feng, Lin, Chia-Feng |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4929681/ https://www.ncbi.nlm.nih.gov/pubmed/27363290 http://dx.doi.org/10.1038/srep29138 |
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