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Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations

The semiconductor device modeling program PC-ID and the programs that support its use in high-accuracy modeling of photodiodes, all of which were described in Part I of this series of papers, are used to simulate the interpolation of high-accuracy internal quantum-efficiency calibrations in the spec...

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Detalles Bibliográficos
Autores principales: Geist, Jon, Robinson, A. M., James, C. R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1991
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4930054/
https://www.ncbi.nlm.nih.gov/pubmed/28184124
http://dx.doi.org/10.6028/jres.096.025
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author Geist, Jon
Robinson, A. M.
James, C. R.
author_facet Geist, Jon
Robinson, A. M.
James, C. R.
author_sort Geist, Jon
collection PubMed
description The semiconductor device modeling program PC-ID and the programs that support its use in high-accuracy modeling of photodiodes, all of which were described in Part I of this series of papers, are used to simulate the interpolation of high-accuracy internal quantum-efficiency calibrations in the spectral region between 450 nm and 850 nm. Convenient interpolation formulae that depend only upon wavelength are derived. Uncertainty spectra for a number of sources of error are also derived. The formulae are normalized to experimental internal-quantum efficiency calibrations in the 440 to 470 nm spectral region and at 860 nm and arc used to interpolate the calibration values between these wavelengths. The results of the interpolations are compared with experimental calibration data that are available at a few wavelengths between 440 and 860 nm. The disagreement between the interpolated and measured internal quantum-efficiency data is never worse than 0.0003.
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spelling pubmed-49300542017-02-09 Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations Geist, Jon Robinson, A. M. James, C. R. J Res Natl Inst Stand Technol Article The semiconductor device modeling program PC-ID and the programs that support its use in high-accuracy modeling of photodiodes, all of which were described in Part I of this series of papers, are used to simulate the interpolation of high-accuracy internal quantum-efficiency calibrations in the spectral region between 450 nm and 850 nm. Convenient interpolation formulae that depend only upon wavelength are derived. Uncertainty spectra for a number of sources of error are also derived. The formulae are normalized to experimental internal-quantum efficiency calibrations in the 440 to 470 nm spectral region and at 860 nm and arc used to interpolate the calibration values between these wavelengths. The results of the interpolations are compared with experimental calibration data that are available at a few wavelengths between 440 and 860 nm. The disagreement between the interpolated and measured internal quantum-efficiency data is never worse than 0.0003. [Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology 1991 /pmc/articles/PMC4930054/ /pubmed/28184124 http://dx.doi.org/10.6028/jres.096.025 Text en https://creativecommons.org/publicdomain/zero/1.0/ The Journal of Research of the National Institute of Standards and Technology is a publication of the U.S. Government. The papers are in the public domain and are not subject to copyright in the United States. Articles from J Res may contain photographs or illustrations copyrighted by other commercial organizations or individuals that may not be used without obtaining prior approval from the holder of the copyright.
spellingShingle Article
Geist, Jon
Robinson, A. M.
James, C. R.
Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations
title Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations
title_full Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations
title_fullStr Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations
title_full_unstemmed Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations
title_short Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part III: Interpolating and Extrapolating Internal Quantum-Efficiency Calibrations
title_sort numerical modeling of silicon photodiodes for high-accuracy applications part iii: interpolating and extrapolating internal quantum-efficiency calibrations
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4930054/
https://www.ncbi.nlm.nih.gov/pubmed/28184124
http://dx.doi.org/10.6028/jres.096.025
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