The stability of aluminium oxide monolayer and its interface with two-dimensional materials

The miniaturization of future electronic devices requires the knowledge of interfacial properties between two-dimensional channel materials and high-κ dielectrics in the limit of one atomic layer thickness. In this report, by combining particle-swarm optimization method with first-principles calcula...

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Detalles Bibliográficos
Autores principales: Song, Ting Ting, Yang, Ming, Chai, Jian Wei, Callsen, Martin, Zhou, Jun, Yang, Tong, Zhang, Zheng, Pan, Ji Sheng, Chi, Dong Zhi, Feng, Yuan Ping, Wang, Shi Jie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4933898/
https://www.ncbi.nlm.nih.gov/pubmed/27381580
http://dx.doi.org/10.1038/srep29221

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4933898/
https://www.ncbi.nlm.nih.gov/pubmed/27381580
http://dx.doi.org/10.1038/srep29221

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