Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalize...

Descripción completa

Detalles Bibliográficos
Autores principales: Gao, Xian, Wei, Zhipeng, Zhao, Fenghuan, Yang, Yahui, Chen, Rui, Fang, Xuan, Tang, Jilong, Fang, Dan, Wang, Dengkui, Li, Ruixue, Ge, Xiaotian, Ma, Xiaohui, Wang, Xiaohua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4933967/
https://www.ncbi.nlm.nih.gov/pubmed/27381641
http://dx.doi.org/10.1038/srep29112

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4933967/
https://www.ncbi.nlm.nih.gov/pubmed/27381641
http://dx.doi.org/10.1038/srep29112

Ejemplares similares