Cargando…

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalize...

Descripción completa

Detalles Bibliográficos
Autores principales:	Gao, Xian, Wei, Zhipeng, Zhao, Fenghuan, Yang, Yahui, Chen, Rui, Fang, Xuan, Tang, Jilong, Fang, Dan, Wang, Dengkui, Li, Ruixue, Ge, Xiaotian, Ma, Xiaohui, Wang, Xiaohua
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4933967/ https://www.ncbi.nlm.nih.gov/pubmed/27381641 http://dx.doi.org/10.1038/srep29112

Ejemplares similares

Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components
por: Li, Haolin, et al.
Publicado: (2019)

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
por: Sadofyev, Yuri G., et al.
Publicado: (2010)

Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing
por: Wang, Dengkui, et al.
Publicado: (2021)

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers
por: Loeber, Thomas H, et al.
Publicado: (2011)

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
por: Gonzalez, David, et al.
Publicado: (2023)

Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment
por: Fang, Xuan, et al.
Publicado: (2018)

Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition
por: Wang, Shenglin, et al.
Publicado: (2023)

A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect
por: Ma, Boyang, et al.
Publicado: (2022)

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range
por: Ahmad, Estiak, et al.
Publicado: (2017)

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy
por: Tasi, Chi-Tsung, et al.
Publicado: (2018)

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers
por: Salhi, A., et al.
Publicado: (2019)

Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors
por: Parakh, M., et al.
Publicado: (2022)

Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
por: Son, Hoki, et al.
Publicado: (2021)

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
por: Xu, Pengfa, et al.
Publicado: (2011)

GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers
por: Ballabio, Andrea, et al.
Publicado: (2019)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
por: Benyahia, D., et al.
Publicado: (2018)

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications
por: Braza, V., et al.
Publicado: (2017)

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
por: Ramaswamy, Priyanka, et al.
Publicado: (2021)

NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition
por: Wu, Min-Ru, et al.
Publicado: (2019)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
por: Shih, Huan-Yu, et al.
Publicado: (2015)

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate
por: Balagula, Roman M., et al.
Publicado: (2022)

Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots
por: Lin, T. N., et al.
Publicado: (2016)

Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
por: Ho, V. X., et al.
Publicado: (2017)

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
por: Lin, Meng-Hung, et al.
Publicado: (2010)

Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
por: Diep, Nhu Quynh, et al.
Publicado: (2021)

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
por: Makhloufi, Hajer, et al.
Publicado: (2014)

Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
por: Chen, Wei-Chun, et al.
Publicado: (2012)

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers
por: Złotnik, Sebastian, et al.
Publicado: (2021)

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
por: Wang, Jiaming, et al.
Publicado: (2017)

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
por: Manzo, Sebastian, et al.
Publicado: (2022)

Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy
por: Marchewka, Michał, et al.
Publicado: (2023)

Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles
por: Liu, Mengying, et al.
Publicado: (2022)

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides
por: Remis, Andres, et al.
Publicado: (2023)

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
por: Chusovitin, Evgeniy, et al.
Publicado: (2018)

Ordered and Disordered Phases in Mo(1−x)W(x)S(2) Monolayer
por: Tan, Wei, et al.
Publicado: (2017)

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
por: Ma, Dingyu, et al.
Publicado: (2017)

Observation of T(2)-like coherent optical phonons in epitaxial Ge(2)Sb(2)Te(5)/GaSb(001) films
por: Shalini, A., et al.
Publicado: (2013)

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
por: Lu, Shulong, et al.
Publicado: (2011)

Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
por: Lo, Shun-Tsung, et al.
Publicado: (2011)

Substrate Induced Strain Field in FeRh Epilayers Grown on Single Crystal MgO (001) Substrates
por: Barton, C. W., et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_forhds1aq1tqna6sbs2ab4rtum