Point contact resistive switching memory based on self-formed interface of Al/ITO

Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization...

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Detalles Bibliográficos
Autores principales: Li, Qiuhong, Qiu, Linjun, Wei, Xianhua, Dai, Bo, Zeng, Huizhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4935939/
https://www.ncbi.nlm.nih.gov/pubmed/27383005
http://dx.doi.org/10.1038/srep29347

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4935939/
https://www.ncbi.nlm.nih.gov/pubmed/27383005
http://dx.doi.org/10.1038/srep29347

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