Valley-engineered ultra-thin silicon for high-performance junctionless transistors

Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineerin...

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Detalles Bibliográficos
Autores principales: Kim, Seung-Yoon, Choi, Sung-Yool, Hwang, Wan Sik, Cho, Byung Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4937383/
https://www.ncbi.nlm.nih.gov/pubmed/27389874
http://dx.doi.org/10.1038/srep29354

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4937383/
https://www.ncbi.nlm.nih.gov/pubmed/27389874
http://dx.doi.org/10.1038/srep29354

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