Polarity control in WSe(2) double-gate transistors

As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides,...

Descripción completa

Detalles Bibliográficos
Autores principales: Resta, Giovanni V., Sutar, Surajit, Balaji, Yashwanth, Lin, Dennis, Raghavan, Praveen, Radu, Iuliana, Catthoor, Francky, Thean, Aaron, Gaillardon, Pierre-Emmanuel, de Micheli, Giovanni
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4937442/
https://www.ncbi.nlm.nih.gov/pubmed/27390014
http://dx.doi.org/10.1038/srep29448

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4937442/
https://www.ncbi.nlm.nih.gov/pubmed/27390014
http://dx.doi.org/10.1038/srep29448

Ejemplares similares