Cargando…
Metal-Semiconductor-Metal Near-Ultraviolet (~380 nm) Photodetectors by Selective Area Growth of ZnO Nanorods and SiO(2) Passivation
Metal-semiconductor-metal near-ultraviolet (NUV) photodetectors (PDs) based on zinc oxide (ZnO) nanorods (NRs), operating at λ ~ 380 nm, were fabricated using conventional photolithography and hydrothermal synthesis processes. The vertically aligned ZnO NRs were selectively grown in the channel area...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2016
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4947069/ https://www.ncbi.nlm.nih.gov/pubmed/27422775 http://dx.doi.org/10.1186/s11671-016-1541-3 |