Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different g...

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Autores principales: García, Héctor, Castán, Helena, Dueñas, Salvador, Bailón, Luis, García-Hernansanz, Rodrigo, Olea, Javier, del Prado, Álvaro, Mártil, Ignacio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4947466/
https://www.ncbi.nlm.nih.gov/pubmed/27423876
http://dx.doi.org/10.1186/s11671-016-1545-z
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author García, Héctor
Castán, Helena
Dueñas, Salvador
Bailón, Luis
García-Hernansanz, Rodrigo
Olea, Javier
del Prado, Álvaro
Mártil, Ignacio
author_facet García, Héctor
Castán, Helena
Dueñas, Salvador
Bailón, Luis
García-Hernansanz, Rodrigo
Olea, Javier
del Prado, Álvaro
Mártil, Ignacio
author_sort García, Héctor
collection PubMed
description A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.
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spelling pubmed-49474662016-07-26 Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications García, Héctor Castán, Helena Dueñas, Salvador Bailón, Luis García-Hernansanz, Rodrigo Olea, Javier del Prado, Álvaro Mártil, Ignacio Nanoscale Res Lett Nano Express A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice. Springer US 2016-07-16 /pmc/articles/PMC4947466/ /pubmed/27423876 http://dx.doi.org/10.1186/s11671-016-1545-z Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
García, Héctor
Castán, Helena
Dueñas, Salvador
Bailón, Luis
García-Hernansanz, Rodrigo
Olea, Javier
del Prado, Álvaro
Mártil, Ignacio
Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications
title Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications
title_full Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications
title_fullStr Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications
title_full_unstemmed Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications
title_short Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications
title_sort electrical characterization of amorphous silicon mis-based structures for hit solar cell applications
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4947466/
https://www.ncbi.nlm.nih.gov/pubmed/27423876
http://dx.doi.org/10.1186/s11671-016-1545-z
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