Role of hydrogen in volatile behaviour of defects in SiO(2)-based electronic devices

Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic devices. Recent advances in experimental techniques used for probing defect properties have led to new insights into t...

Descripción completa

Detalles Bibliográficos
Autores principales: Wimmer, Yannick, El-Sayed, Al-Moatasem, Gös, Wolfgang, Grasser, Tibor, Shluger, Alexander L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society Publishing 2016
Materias:
Special Feature
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4950194/
https://www.ncbi.nlm.nih.gov/pubmed/27436969
http://dx.doi.org/10.1098/rspa.2016.0009

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4950194/
https://www.ncbi.nlm.nih.gov/pubmed/27436969
http://dx.doi.org/10.1098/rspa.2016.0009

Ejemplares similares