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Role of hydrogen in volatile behaviour of defects in SiO(2)-based electronic devices
Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic devices. Recent advances in experimental techniques used for probing defect properties have led to new insights into t...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society Publishing
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4950194/ https://www.ncbi.nlm.nih.gov/pubmed/27436969 http://dx.doi.org/10.1098/rspa.2016.0009 |