The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar on...

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Detalles Bibliográficos
Autores principales: Jiao, Qianqian, Chen, Zhizhong, Feng, Yulong, Li, Shunfeng, Jiang, Shengxiang, Li, Junze, Chen, Yifan, Yu, Tongjun, Kang, Xiangning, Shen, Bo, Zhang, Guoyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4954795/
https://www.ncbi.nlm.nih.gov/pubmed/27440081
http://dx.doi.org/10.1186/s11671-016-1548-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4954795/
https://www.ncbi.nlm.nih.gov/pubmed/27440081
http://dx.doi.org/10.1186/s11671-016-1548-9

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