The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar on...

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Detalles Bibliográficos
Autores principales: Jiao, Qianqian, Chen, Zhizhong, Feng, Yulong, Li, Shunfeng, Jiang, Shengxiang, Li, Junze, Chen, Yifan, Yu, Tongjun, Kang, Xiangning, Shen, Bo, Zhang, Guoyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4954795/
https://www.ncbi.nlm.nih.gov/pubmed/27440081
http://dx.doi.org/10.1186/s11671-016-1548-9
Descripción
Sumario:InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.

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