The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar on...

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Autores principales: Jiao, Qianqian, Chen, Zhizhong, Feng, Yulong, Li, Shunfeng, Jiang, Shengxiang, Li, Junze, Chen, Yifan, Yu, Tongjun, Kang, Xiangning, Shen, Bo, Zhang, Guoyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4954795/
https://www.ncbi.nlm.nih.gov/pubmed/27440081
http://dx.doi.org/10.1186/s11671-016-1548-9
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author Jiao, Qianqian
Chen, Zhizhong
Feng, Yulong
Li, Shunfeng
Jiang, Shengxiang
Li, Junze
Chen, Yifan
Yu, Tongjun
Kang, Xiangning
Shen, Bo
Zhang, Guoyi
author_facet Jiao, Qianqian
Chen, Zhizhong
Feng, Yulong
Li, Shunfeng
Jiang, Shengxiang
Li, Junze
Chen, Yifan
Yu, Tongjun
Kang, Xiangning
Shen, Bo
Zhang, Guoyi
author_sort Jiao, Qianqian
collection PubMed
description InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.
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spelling pubmed-49547952016-07-26 The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays Jiao, Qianqian Chen, Zhizhong Feng, Yulong Li, Shunfeng Jiang, Shengxiang Li, Junze Chen, Yifan Yu, Tongjun Kang, Xiangning Shen, Bo Zhang, Guoyi Nanoscale Res Lett Nano Express InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored. Springer US 2016-07-20 /pmc/articles/PMC4954795/ /pubmed/27440081 http://dx.doi.org/10.1186/s11671-016-1548-9 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Jiao, Qianqian
Chen, Zhizhong
Feng, Yulong
Li, Shunfeng
Jiang, Shengxiang
Li, Junze
Chen, Yifan
Yu, Tongjun
Kang, Xiangning
Shen, Bo
Zhang, Guoyi
The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
title The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
title_full The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
title_fullStr The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
title_full_unstemmed The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
title_short The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
title_sort effects of nanocavity and photonic crystal in ingan/gan nanorod led arrays
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4954795/
https://www.ncbi.nlm.nih.gov/pubmed/27440081
http://dx.doi.org/10.1186/s11671-016-1548-9
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