Memory window engineering of Ta(2)O(5−x) oxide-based resistive switches via incorporation of various insulating frames

Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which...

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Detalles Bibliográficos
Autores principales: Lee, Ah Rahm, Baek, Gwang Ho, Kim, Tae Yoon, Ko, Won Bae, Yang, Seung Mo, Kim, Jongmin, Im, Hyun Sik, Hong, Jin Pyo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4958974/
https://www.ncbi.nlm.nih.gov/pubmed/27451943
http://dx.doi.org/10.1038/srep30333

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4958974/
https://www.ncbi.nlm.nih.gov/pubmed/27451943
http://dx.doi.org/10.1038/srep30333

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