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Resolution enhancement using plasmonic metamask for wafer-scale photolithography in the far field

Resolution enhancement in far-field photolithography is demonstrated using a plasmonic metamask in the proximity regime, in which Fresnel diffraction is dominant. The transverse magnetic component of the diffracted wave from the photomask, which reduces the pattern visibility and lowers the resoluti...

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Detalles Bibliográficos
Autores principales: Baek, Seunghwa, Kang, Gumin, Kang, Min, Lee, Chang-Won, Kim, Kyoungsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4960539/
https://www.ncbi.nlm.nih.gov/pubmed/27457127
http://dx.doi.org/10.1038/srep30476
Descripción
Sumario:Resolution enhancement in far-field photolithography is demonstrated using a plasmonic metamask in the proximity regime, in which Fresnel diffraction is dominant. The transverse magnetic component of the diffracted wave from the photomask, which reduces the pattern visibility and lowers the resolution, was successfully controlled by coupling with the anti-symmetric mode of the excited surface plasmon. We obtained a consistently finely-patterned photoresist surface at a distance of up to 15 μm from the mask surface for 3-μm-pitch slits because of conserved field visibility when propagating from the near-field to the proximity regime. We confirmed that sharp edge patterning is indeed possible when using a wafer-scale photomask in the proximity photolithography regime. Our plasmonic metamask method produces cost savings for ultra-large-scale high-density display fabrication by maintaining longer photomask lifetimes and by allowing sufficient tolerance for the distance between the photomask and the photoresist.