Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (...

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Detalles Bibliográficos
Autores principales: Suzuki, K. Z., Ranjbar, R., Okabayashi, J., Miura, Y., Sugihara, A., Tsuchiura, H., Mizukami, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4960582/
https://www.ncbi.nlm.nih.gov/pubmed/27457186
http://dx.doi.org/10.1038/srep30249

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4960582/
https://www.ncbi.nlm.nih.gov/pubmed/27457186
http://dx.doi.org/10.1038/srep30249

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