Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a criti...

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Detalles Bibliográficos
Autores principales: Jang, Sung Kyu, Youn, Jiyoun, Song, Young Jae, Lee, Sungjoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4960585/
https://www.ncbi.nlm.nih.gov/pubmed/27458024
http://dx.doi.org/10.1038/srep30449

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4960585/
https://www.ncbi.nlm.nih.gov/pubmed/27458024
http://dx.doi.org/10.1038/srep30449

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