Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO(2) Multilayers

High-conductive phosphorus-doped Si nanocrystals/SiO(2)(nc-Si/SiO(2)) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport b...

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Detalles Bibliográficos
Autores principales: Qian, Mingqing, Shan, Dan, Ji, Yang, Li, Dongke, Xu, Jun, Li, Wei, Chen, Kunji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4961652/
https://www.ncbi.nlm.nih.gov/pubmed/27460594
http://dx.doi.org/10.1186/s11671-016-1561-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4961652/
https://www.ncbi.nlm.nih.gov/pubmed/27460594
http://dx.doi.org/10.1186/s11671-016-1561-z

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