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Nature of the Insulating Ground State of the Two-Dimensional Sn Atom Lattice on SiC(0001)

Semiconductor surfaces with narrow surface bands provide unique playgrounds to search for Mott-insulating state. Recently, a combined experimental and theoretical study of the two-dimensional (2D) Sn atom lattice on a wide-gap SiC(0001) substrate proposed a Mott-type insulator driven by strong on-si...

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Detalles Bibliográficos
Autores principales: Yi, Seho, Lee, Hunpyo, Choi, Jin-Ho, Cho, Jun-Hyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4964574/
https://www.ncbi.nlm.nih.gov/pubmed/27465057
http://dx.doi.org/10.1038/srep30598