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Defect visualization of Cu(InGa)(SeS)(2) thin films using DLTS measurement
Defect depth profiles of Cu (In(1−x),Ga(x))(Se(1−y)S(y))(2) (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1...
Autores principales: | , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4967860/ https://www.ncbi.nlm.nih.gov/pubmed/27476672 http://dx.doi.org/10.1038/srep30554 |