Defect visualization of Cu(InGa)(SeS)(2) thin films using DLTS measurement

Defect depth profiles of Cu (In(1−x),Ga(x))(Se(1−y)S(y))(2) (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1...

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Detalles Bibliográficos
Autores principales: Heo, Sung, Chung, JaeGwan, Lee, Hyung-Ik, Lee, Junho, Park, Jong-Bong, Cho, Eunae, Kim, KiHong, Kim, Seong Heon, Park, Gyeong Su, Lee, Dongho, Lee, Jaehan, Nam, Junggyu, Yang, JungYup, Lee, Dongwha, Cho, Hoon Young, Kang, Hee Jae, Choi, Pyung-Ho, Choi, Byoung-Deog
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4967860/
https://www.ncbi.nlm.nih.gov/pubmed/27476672
http://dx.doi.org/10.1038/srep30554

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