Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator...

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Detalles Bibliográficos
Autores principales: Jung, Sungchul, Jeon, Youngeun, Jin, Hanbyul, Lee, Jung-Yong, Ko, Jae-Hyeon, Kim, Nam, Eom, Daejin, Park, Kibog
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4967890/
https://www.ncbi.nlm.nih.gov/pubmed/27476475
http://dx.doi.org/10.1038/srep30646

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4967890/
https://www.ncbi.nlm.nih.gov/pubmed/27476475
http://dx.doi.org/10.1038/srep30646

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