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A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity
In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodio...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4970049/ https://www.ncbi.nlm.nih.gov/pubmed/27367699 http://dx.doi.org/10.3390/s16070999 |