Asymmetry-induced resistive switching in Ag-Ag(2)S-Ag memristors enabling a simplified atomic-scale memory design

Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching me...

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Detalles Bibliográficos
Autores principales: Gubicza, Agnes, Manrique, Dávid Zs., Pósa, László, Lambert, Colin J., Mihály, György, Csontos, Miklós, Halbritter, András
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4973259/
https://www.ncbi.nlm.nih.gov/pubmed/27488426
http://dx.doi.org/10.1038/srep30775

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4973259/
https://www.ncbi.nlm.nih.gov/pubmed/27488426
http://dx.doi.org/10.1038/srep30775

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