Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure

Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence...

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Detalles Bibliográficos
Autores principales: Hwang, Beomyong, Hwang, Jeongwoon, Yoon, Jong Keon, Lim, Sungjun, Kim, Sungmin, Lee, Minjun, Kwon, Jeong Hoon, Baek, Hongwoo, Sung, Dongchul, Kim, Gunn, Hong, Suklyun, Ihm, Jisoon, Stroscio, Joseph A., Kuk, Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4977565/
https://www.ncbi.nlm.nih.gov/pubmed/27503427
http://dx.doi.org/10.1038/srep31160

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4977565/
https://www.ncbi.nlm.nih.gov/pubmed/27503427
http://dx.doi.org/10.1038/srep31160

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