Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

Epitaxial indium tin oxide films have been grown on both LaAlO(3) and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the cha...

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Detalles Bibliográficos
Autores principales: Leng, X., Bollinger, A. T., Božović, I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4979031/
https://www.ncbi.nlm.nih.gov/pubmed/27506371
http://dx.doi.org/10.1038/srep31239

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4979031/
https://www.ncbi.nlm.nih.gov/pubmed/27506371
http://dx.doi.org/10.1038/srep31239

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