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Purely electronic mechanism of electrolyte gating of indium tin oxide thin films
Epitaxial indium tin oxide films have been grown on both LaAlO(3) and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the cha...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4979031/ https://www.ncbi.nlm.nih.gov/pubmed/27506371 http://dx.doi.org/10.1038/srep31239 |