Disorder engineering and conductivity dome in ReS(2) with electrolyte gating

Atomically thin rhenium disulphide (ReS(2)) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in electrical and optical properties. Here we re...

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Detalles Bibliográficos
Autores principales: Ovchinnikov, Dmitry, Gargiulo, Fernando, Allain, Adrien, Pasquier, Diego José, Dumcenco, Dumitru, Ho, Ching-Hwa, Yazyev, Oleg V., Kis, Andras
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4979068/
https://www.ncbi.nlm.nih.gov/pubmed/27499375
http://dx.doi.org/10.1038/ncomms12391

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4979068/
https://www.ncbi.nlm.nih.gov/pubmed/27499375
http://dx.doi.org/10.1038/ncomms12391

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