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Disorder engineering and conductivity dome in ReS(2) with electrolyte gating
Atomically thin rhenium disulphide (ReS(2)) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in electrical and optical properties. Here we re...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4979068/ https://www.ncbi.nlm.nih.gov/pubmed/27499375 http://dx.doi.org/10.1038/ncomms12391 |