Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process,...

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Detalles Bibliográficos
Autores principales: Cho, Seungho, Yun, Chao, Tappertzhofen, Stefan, Kursumovic, Ahmed, Lee, Shinbuhm, Lu, Ping, Jia, Quanxi, Fan, Meng, Jian, Jie, Wang, Haiyan, Hofmann, Stephan, MacManus-Driscoll, Judith L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4980456/
https://www.ncbi.nlm.nih.gov/pubmed/27491392
http://dx.doi.org/10.1038/ncomms12373

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4980456/
https://www.ncbi.nlm.nih.gov/pubmed/27491392
http://dx.doi.org/10.1038/ncomms12373

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