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Impact of defect occupation on conduction in amorphous Ge(2)Sb(2)Te(5)

Storage concepts employing the resistance of phase-change memory (PRAM) have matured in recent years. Attempts to model the conduction in the amorphous state of phase-change materials dominating the resistance of PRAM devices commonly invoke a connection to the electronic density-of-states (DoS) of...

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Detalles Bibliográficos
Autores principales: Kaes, Matthias, Salinga, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4985640/
https://www.ncbi.nlm.nih.gov/pubmed/27526783
http://dx.doi.org/10.1038/srep31699